advanced power dual n-channel enhancement electronics corp. mode power mosfet simple drive requirement bv dss 20v low on-resistance r ds(on) 18m fast switching performance i d 8.5a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without n otice drain current, v gs @ 4.5v 3 halogen-free product 1 pulsed drain current 1 30 total power dissipation 2 -55 to 150 parameter 8.5 201501072 drain-source voltage 20 gate-source voltage + 8 storage temperature range drain current, v gs @ 4.5v 3 6.8 ap9938gem-hf parameter rating operating junction temperature range -55 to 150 thermal data s1 g1 s2 g2 d1 d1 d2 d2 so-8 s1 g1 d1 s2 g2 d2 ap9938 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =6a - - 18 m v gs =2.5v, i d =4a - - 24 m v gs =1.8v, i d =2a - - 28 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1 v g fs forward transconductance v ds =5v, i d =6a - 28 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 8v, v ds =0v - - + 30 ua q g total gate charge i d =6a - 16 26 nc q gs gate-source charge v ds =10v - 1.6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.3 - nc t d(on) turn-on delay time v ds =10v - 7 - ns t r rise time i d =1a - 11 - ns t d(off) turn-off delay time r g =3.3 - 31 - ns t f fall time v gs =5v - 6 - ns c iss input capacitance v gs =0v - 1070 1710 pf c oss output capacitance v ds =15v - 130 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.4 2.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =6a, v gs =0 v , - 14 - ns q rr reverse recovery charge di/dt=100a/s - 4 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. 2 ap9938gem-hf
ap9938gem-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 24 0 1 1 2 2 3 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 5.0v 4.5v 3.5v 2.5v v g =1.8v 0 4 8 12 16 20 0 1 2 3 4 5 v ds , drain-to-source voltage (v) i d , drain current (a) 5.0v 4.5v 3.5v 2.5v v g =1.8v t a = 150 o c 14 16 18 20 1 2 3 4 5 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 2 a t a =25 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 6 a v g = 4.5 v 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua
ap9938gem-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 4 0 1 2 3 4 5 6 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 10 v i d = 6 a 50 250 450 650 850 1050 1250 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 /w t t single pulse 0.01 0.02 0.05 0.1 0.2 duty factor=0.5 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 40 0 1 2 3 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v operation in this area limited by r ds(on) t j =-40 o c 0 2 4 6 8 10 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a)
ap9938gem-hf marking information 5 9938gem ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
|
